Consider an n-type doped GaAs semiconductor at 300 K with an experimentally measured electron concentration of 3
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Consider an n-type doped GaAs semiconductor at 300 K with an experimentally measured electron concentration of 3 × 1017 cm-3. The n-type dopant has an energy level such that ΔEd = EC = Ed = 25 meV. Assuming there is no acceptor, determine the proportion of ionized donors. Determine the total concentration of donors.
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