Consider the circuit shown in Figure 3.50 in the text. The threshold voltage and process conduction parameter for each transistor is \(V_{T N}=0.6 \mathrm{~V}\) and \(k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}\). Let \(\lambda=0\) for all transistors. Assume that \(M_{1}\) and \(M_{2}\) are matched. Design width-to-length ratios such that \(I_{Q}=0.35 \mathrm{~mA}\), \(I_{\mathrm{REF}}=0.15 \mathrm{~mA}\), and \(V_{D S 2}(\mathrm{sat})=0.5 \mathrm{~V}\). Find \(R_{D}\) such that \(V_{D S 1}=3.5 \mathrm{~V}\).

Figure 3.50:-

Transcribed Image Text:

M4 V GSA IREF V+= 5 V Rp + RG VGSI + M VDSI ww + M2 VDS2 M3 + VGS3 VGS2 V=-5 V Figure 3.50 Implementation of a MOSFET constant-current source