In the production of many microelectronic devices, continuous chemical vapor deposition (CVD) processes are used to deposit thin and exceptionally uniform silicon dioxide films on silicon wafers. One CVD process involves the reaction between saline and oxygen at a very low pressure SiH4 (g) + O2 (g) SiO2 (s) + 2 H2 (g). The feed gas, which contains oxygen and saline in a ratio 8.00 mol O2/mol SiH4, enters the reactor at 298 K and 3.00 torr absolute. The reaction products emerge at 1375 K and 3.00 torr absolute. Essentially all of the saline in the feed is consumed.

(a) Taking a basis of 1 m3 of feed gas, calculate the moles of each component of the feed and product mixtures and the extent of reaction, ε (mol).

(b) Calculate the standard heat of the saline oxidation reaction (kJ/mol). Then, taking the feed and product species at 298 K (25°C) as references, prepare an inlet-outlet enthalpy table and calculate and fill in the component amounts (mol) and specific enthalpies (kJ/mol).

The temperatures in the formulas for Cp are in Kelvin.

(c) Calculate the heat (kJ) that must be transferred to or from the reactor (state which it is).

Then determine the required heat transfer rate (kW) required for a reactor feed of 27.5 m3/h.