Inside a reverse biased p-n junction both electrons and holes have been swept, out
(a) Calculate the electron-hole pair generation rate under these conditions, assuming nc* = nh* and tc = th = t.
(b) Find the factor by which this generation rate is higher than the generation rate in an n-type semiconductor from which the holes have been swept out, but in which the electron concentration remains equal to nd + >> ni.
(c) Give a numerical value for this ratio for Si with nd + = 1016 cm–3.