The CMOS circuit of Fig. 9.56 is to be used as a high-slew-rate op amp. A load capacitance of C_L= 10 pF is connected from V_oto ground. Supply voltages are ± 5 V and I₁= 20 µA. Devices M₁ €“ M₄have W = 20 µm and L = 1 µm and devices M₅€“ M₈have W = 60 µm and L = 1 µm. All other NMOS devices have W = 60 µm and L = 1 µm, and all other PMOS devices have W = 300 µm and L = 1 µm. Device data are μ_nC_ox= 60 µA/V², V_tn= 0.7 V, V_tp= ˆ’ 0.7 V, γ = 0, and |λ| = 0.05 V^ˆ’1.

Figure 9.56:

Transcribed Image Text:

VpD Маз Mg M14 M40 iз M4. Mз in+ M2 M1 in- M8 M7 M6 M5 M15 M16 M42 -Vss