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A MOS capacitor is composed of a polysilicon gate and silicon substrate. It is given that the electron affinity of silicon is 4.05eV, the
A MOS capacitor is composed of a polysilicon gate and silicon substrate. It is given that the electron affinity of silicon is 4.05eV, the workfunction of the polysilicon gate is 4.2eV and the workfunction of the silicon substrate is 4.3eV What is the flatband voltage of the MOS capacitor? eV
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Analysis and Design of Analog Integrated Circuits
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
5th edition
1111827052, 1285401107, 9781285401102 , 978-0470245996
