61. Three different C2F6 ow rates (SCCM) were considered in an experiment to investigate the effect of

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61. Three different C2F6 ow rates (SCCM) were considered in an experiment to investigate the effect of ow rate on the uniformity (%) of the etch on a silicon wafer used in the manufacture of integrated circuits, resulting in the following data:

Flow rate 125 2.6 2.7 3.0 3.2 3.8 4.6 160 3.6 4.2 4.2 4.6 4.9 5.0 200 2.9 3.4 3.5 4.1 4.6 5.1 Compare and contrast the uniformity observations resulting from these three different ow rates.

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