Question
A 180 nm NMOS transistor has a gate oxide thickness of 40A. (a) What is its gate capacitance per micron of width? (b) If its
A 180 nm NMOS transistor has a gate oxide thickness of 40Å.
(a) What is its gate capacitance per micron of width?
(b) If its threshold voltage is 0.55V and the mobility of electrons in this process is 400 cm 2 /Vs, calculate the value of β for a transistor width of 2.5μm.
(c) Determine the saturation voltage and saturation current for V gs = 1.0V and V gs = 2.0V.
(d) Sketch the I ds vs. V ds curves for this transistor in the range 0 < V ds < 2.0V for V gs = 0.5V, 1.0V and 2.0V.
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a Write the expression for the capacitance gate and channel The express...
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Introduction To Statistical Quality Control
Authors: Douglas C Montgomery
7th Edition
1118146816, 978-1-118-3225, 978-1118146811
