A typical silicon solar cell has the following parameters:

Band gap of silicon is 1.1 eV.

The p-type material has an acceptor concentration N _A = 1 × 10 ¹⁶ cm ³ , with hole diffusion coefficient D _p = 40 cm ² /s and lifetime T _p = 5 µs.

The n-type material has a donor concentration N _D = 10 ¹⁹ cm ³ , with electron diffusion coefficient Dn = 40 cm ² /s and lifetime T _n = 1 µs.

The intrinsic carrier concentration in silicon is n _i = 1.5 × 10 ¹⁰ cm ³ . For a 1-cm × 1-cm solar cell, calculate the following:

1. Reverse saturation current I ₀

2. Short-circuit current under one sun solar radiation

3. Open-circuit voltage at room temperature