Question
A typical silicon solar cell has the following parameters: Band gap of silicon is 1.1 eV. The p-type material has an acceptor concentration N A
A typical silicon solar cell has the following parameters:
Band gap of silicon is 1.1 eV.
The p-type material has an acceptor concentration N A = 1 × 10 16 cm 3 , with hole diffusion coefficient D p = 40 cm 2 /s and lifetime T p = 5 µs.
The n-type material has a donor concentration N D = 10 19 cm 3 , with electron diffusion coefficient Dn = 40 cm 2 /s and lifetime T n = 1 µs.
The intrinsic carrier concentration in silicon is n i = 1.5 × 10 10 cm 3 . For a 1-cm × 1-cm solar cell, calculate the following:
1. Reverse saturation current I 0
2. Short-circuit current under one sun solar radiation
3. Open-circuit voltage at room temperature
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Chemistry The Central Science
Authors: Theodore Brown, Eugene LeMay, Bruce Bursten, Catherine Murphy, Patrick Woodward
12th edition
321696727, 978-0132175081, 978-0321696724
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