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A typical silicon solar cell has the following parameters: Band gap of silicon is 1.1 eV. The p-type material has an acceptor concentration N A

A typical silicon solar cell has the following parameters:

Band gap of silicon is 1.1 eV.

The p-type material has an acceptor concentration N A = 1 × 10 16 cm 3 , with hole diffusion coefficient D p = 40 cm 2 /s and lifetime T p = 5 µs.

The n-type material has a donor concentration N D = 10 19 cm 3 , with electron diffusion coefficient Dn = 40 cm 2 /s and lifetime T n = 1 µs.

The intrinsic carrier concentration in silicon is n i = 1.5 × 10 10 cm 3 . For a 1-cm × 1-cm solar cell, calculate the following:

1. Reverse saturation current I 0

2. Short-circuit current under one sun solar radiation

3. Open-circuit voltage at room temperature

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