An n-type gallium arsenide semicnductor is doped with N _d = 10 ¹⁶ cm ^-3 and N _a = 0. the minority carrier lifetime is r _po = 2× 10 ^-7 s. calculate the steady-state increase in conductivity and the steady-state excess carrier recombination rate if a uniform genreration rate, g' = 2 × 10 ²¹ cm ^-3 - s ^-1 , is incident on the semiconductor.