1. (a) Assume the actual value of N and N, of intrinsic silicon at 300K are 2.91019 cm-3 and 1.110 19 cm 3 respectively. If the bandgap of the silicon is assumed to be 1.1eV, and if the number of electrons and holes are the same for intrinsic semiconductor, calculate the Fermi level of the intrinsic silicon. (b) If the silicon is doped by boron so that the hole concentration now has increased to 2.51019 cm, calculate the energy differences between the conduction band and the Fermi level.