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1. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of AlSbxAsix can be grown on InP lattice
1. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of AlSbxAsix can be grown on InP lattice matched? What composition of In,GaP is lattice matched to GaAs substrate? What is the band gap energy in each case? (AlAs a 5.66A, Eg-2.16eV, AlSb a 6.14A, Eg-1.6eV, InP, a-5.87A, Eg-1.35eV, GaP, a 5.45A, Eg-2.26eV, GaAs a 5.65A, Eg=1.43eV)
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Auditing Principles And Techniques
Authors: Sanjib Kumar Basu, Andrei Alexandrescu
1st Edition
8177581783, 9788177581782
