1. Calculate and compare the activation energies of growing polysilicon (plot A shown below) and epitaxial silicon (plot B) from silane (SiH4). Which activation is larger and explain why. In plot A, why do you think the slopes for all the precursors in the temperature reaction limited zone are about the same (i.e., approximately the same activation energy?) GROWTH RATE (m/min) TEMPERATURE (C) 1300 1200 1100 1000 900 800 700 600 1.0T OSH4 0.5- 0 BA 02 vSH Cl ASIHCL SiCl4 0.7 0.8 0.9 1.0 1.1 10/T(K) Plot A (above). In (growth rate) versus 1/T for polysilicon. GROWTH RATE (m/min) 10 1420 1100 1000 C T POLY REGION 102 MONOCRYST-REGION 102 0.60 0.70 0.80 10/T (K-) Maximum growth rate for formation of single crystalline silicon as a function of temperature Plot B. Growth of epitaxial Si.