1 Calculate and prove that the magnitude of electric field far away from the depletion region is small compared to that in the space charge region. 2 For the same forward bias of 0.6V, an application requires higher diode current than that calculated in Part 6. If you have a choice to change the dopant concentration in one side of the junction (either p-side or n-side) to achieve this higher current, state whether you will increase or decrease the dopant concentration in the chosen side? Briefly explain your answer. 3 . If the PN-junction diode is made of GaAs semiconductor instead of Silicon, do you expect the total diode current I to remain the same, decrease or increase for the same forward bias of 0.6V ? Explain briefly without doing any calculation. Given Ip=0.3mA,In=3.0mA Total diode current =3.03mA