1. Combining your knowledge of vacuum technologies and lowpressure plasmas so far, think about typical plasma processing conditions that could be used to etch a material from a surface or to deposit a thin film: a) What would be a typical chamber pressure? b) How could this pressure be reached in terms of pumping setup if 100 sccm Ar is used as a process gas? c) Under those conditions, if a plasma is maintained between two electrodes, what would be a typical electron temperature d) How could you couple energy into the plasma to maintain it