1) Consider a semiconductor having Eg=1.7eV and mh=0.63m0;me=0.21m0 at T=300K. a) Calculate the position of the intrinsic Fermi level, Efi, with respect to the middle of the band gap. b) Calculate the intrinsic carrier concentration, ni. c) Impurity atoms are added so that the Fermi level, Ef,, is 0.45eV above the middle of the band gap. Are the impurities donors or acceptors? What was the concentration of impurities added