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1. For 100-KeV implantation of As ions (doubly ionized As) into Si (100) at a current of 10 mA (10-3 A) over an area of
1. For 100-KeV implantation of As ions (doubly ionized As) into Si (100) at a current of 10 mA (10-3 A) over an area of a 12-inch wafer for 10 min: a) Calculate the damage per ion and per unit area (cm2)
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