1. It is a 3:1 to 5:1 mix of sulphuric destructive and hydrogen peroxide that is used to clean wafers of characteristic and metal toxins or photo go against after metal planning

2. SiO2 layer, overlaid two or three layers of an oxynitrided oxide; Current cycles just now and then use an unadulterated SiO2 entryway oxide, yet truly prefer to make a stack that a few atomic layers, each 3-4 thick, of SiO2 for steady quality, overlaid several layers of oxy-nitrided oxide (one with nitrogen added).

3. Take out silicon nitride and pad oxide; The pad oxide and nitride are taken out using a Chemical Mechanical Polishing (CMP) step.

4. The poly silicon layer is made using substance seethe sworn statement (CVD) and it is planned by dry (plasma) drawing.

5. Aluminum is floundered strange wafer, it furthermore fills the contact cuts.

6. Silicon Wafer is placed in a reactor with silane gas (SiH4), and they are warmed again to turn into the polysilicon layer by substance smolder articulation.

7. Molecule Implantation measure; Two distinct approaches to add dopants are scattering and molecule implantation.

8. Explicit oxide advancement is refined by shielding the powerful areas. Silicon nitride (Si3N4) is used for shielding the unique zones during oxidation, which satisfactorily ruins oxide advancement.

9. Scratched field-oxide isolation or Local Oxidation of Silicon; To make disconnected unique areas both the strategies can be used. Among them Local Oxidation of Silicon(LOCOS) is for the most part capable.

10. The resistivity of poly silicon is lessened by Doping poisons.