1. RECOMBINATION OF ELECTRONS AND HOLES A p-type semiconductor (N A = 5 x 10160m'3) of cross section 1mm2 with a bandgap of Eg = 2.4eV is illuminated with a laser source of 0.32 mW of photons with energy 4 eV. Assume that all the light is absorbed uniformly over the semiconductor length of 5pm (A). How many photons are adsorbed per unit time in the semiconductor? (B). What is the rate of excess thermal energy (in watts) given up by the electrons to the lattice before recom- binations. (C). By assuming each photon gives an electron hole-pair (perfect quantum efciency), what is the excess carrier generation rate? (D). Assume the photon energy is halved while the power of the laser source remains constant, how many photons are adsorbed per unit time now? (E). Assume the incident light intensity (power) of the original photon energy (4 eV) is doubled, what is the power for dissipated heat