1. The impurity concentration of the gate of n-type polycrystalline silicon N _D =10 ²⁰cm^-3 , substrate impurity concentration

N _A =5x10¹⁷cm^-3 , gate oxide layer thickness 50, L=0.1um, W=1um from MOSFET

Then ask for the next. However, the number of fixed charges in the oxide layer is 5x10 ¹¹cm^-2 and electrons

The mobility is 500 cm_² /V sec.

( ₀ =8.85x10 ^-14 , K _Si =11.8, =3.9, KT/q=0.026V, n _i =1x10 ¹⁰ cm ^-3 )

1) Threshold voltage

2) Sketch the energy band by entering the value when the gate voltage = threshold voltage.

3) When V _GS =-5V and V _GS =+5V (drain and source are floating) Si surface

Hole and electron count

4) Using the simplified model, transconductance when V _GS =V _DS =3V, m=1.2

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