1) When the MOSFET is working in the velocity saturation operation, the dependence of Ips with respect to VGs is. (single choice) A. linear B. squared C. cubed D. Independent 2) The PMOS transistor of the CMOS inverter with 0 input current. (single choice) A. has B. hasn't gate oxide tunneling leakage 3) The correct ones about the subthreshold slope S of the silicon planar MOSFET among the following statements are (multiple-choice) A. The smaller the value of S, the better performance of the MOSFET. B. The value of S is always > 60 mV/decade. C. S is related to the depletion region capacitance C, under the channel of MOS transistor. The smaller the value of Co, the smaller the value of S. D. Increasing the threshold voltage can increase the value of S and reduce the sub-threshold leakage current. 4) Wireless sensor network nodes are a kind of typical low duty-cycle application, whose working time is much shorter than its idle time. Then, wireless sensor network node processor IC should use process. (single choice) a A. standard B. High Speed(HS) C. Low Voltage(LV) D. Low Leakage(LL)