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2. A silicon BJT with DB = 10 cm2/s, DE = 40 cm2/s, WE= 100 nm, WB = 50 nm and NE= 1018 cm-3 has
2. A silicon BJT with DB = 10 cm2/s, DE = 40 cm2/s, WE= 100 nm, WB = 50 nm and NE= 1018 cm-3 has a = 0.97. Estimate doping concentration in the base of this transistor
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