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2.a) Derive an expression for total diode current starting from Boltzmann relationship in terms of the applied voltage. b) The reverse saturation current of

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2.a) Derive an expression for total diode current starting from Boltzmann relationship in terms of the applied voltage. b) The reverse saturation current of a silicon p - n function diode at an operating temperature of 270C is 50 nA. Compute the dynamic forward and reverse resistances of the diode for applied voltages of 0.8 V and -0.4 V respectively.

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