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2.a) Derive an expression for total diode current starting from Boltzmann relationship in terms of the applied voltage. b) The reverse saturation current of
2.a) Derive an expression for total diode current starting from Boltzmann relationship in terms of the applied voltage. b) The reverse saturation current of a silicon p - n function diode at an operating temperature of 270C is 50 nA. Compute the dynamic forward and reverse resistances of the diode for applied voltages of 0.8 V and -0.4 V respectively.
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