2.a) Explain about various current components in a forward biased p-n junction diode. b) With neat sketches and necessary waveforms explain about the regulation characteristics OR 3.a) With neat sketches and necessary waveforms explain the volt ampere characteristics of PN diode. b) Explain the temperature dependence of VI characteristics of PN diode. c) Compare ideal and practical diodes. 4.a) Draw the circuit of full-wave rectifier with capacitor filter. Explain its operation with necessary equations. b) A full wave rectifier circuit uses two silicon diodes with a forward resistance of 2002 each. A DC voltmeter connected across the load of 1K reads 55.4 volts. Calculate i) Irms ii) Average voltage across each diode iii) ripple factor iv) Transformer secondary voltage rating. OR 5.a) Draw the circuit of full-wave rectifier with L-section filter and derive expression for its ripple factor. b) A 230 V, 60Hz voltage is applied to the primary of a 5:1 step down, center tapped transformer used in a full wave rectifier having a load of 90002. If the diode resistance and the secondary coil resistance together has a resistance of 1002, determine i) dc voltage across the load. ii) dc current flowing through the load. iii) de power delivered to the load. iv) PIV across each diode. 6.a) With neat sketches and necessary waveforms, explain the input and output characteristics of a BJT in CE configuration. Also derive expression for output current. b) The reverse leakage current of the transistor when connected in CB configuration is 0.2 A while it is 18 A when the same transistor is connected in CE configuration. Calculate a and of the transistor. Activ