3. (5pts) According to the stress-strain curve of an alloy, 400 400 Its elastic modulus is: 300 2001 200 100 Its yielding strength is: doo 2002 GUA the 100 OS 0.12 Q Its tensile strength is: 0.04 6.00 Its ductility is: C. Calculations (total 65 pts) 1. (20pts) In semiconductor industry, boron atoms are to be diffused into a silicon wafer using both predeposition at 900C and drive-in heat treatment at 1100 C. It is determined the diffusion coefficients of B in Si are 5.73* 10-20 m/s at 900 C and 1.51*10-17m/s at 1100 C. Please calculate: 1) the preexponent D. (m/s) and activation energy Qo (eV); 2) the boron diffusion coefficient in silicon at 1200 C. 600 3. (5pts) According to the stress-strain curve of an alloy, 500 400 Its elastic modulus is: Its yielding strength is: 500 400 Stress MPa 300 Stress (MPal 300 200 200 Its tensile strength is: 1 100 100 2.000 0.002 0.004 0.006 Its ductility is: Strain 0.00 0.04 0.20 0.12 0.16 0.08 Strain C. Calculations (total 65 pts) 1. (20pts) In semiconductor industry, boron atoms are to be diffused into a silicon wafer using both predeposition at 900C and drive-in heat treatment at 1100 C. It is determined the diffusi coefficients of B in Si are 5.73* 10-20 m/s at 900 C and 1.51*10-17m/s at 1100 C. Please calculate: 1) the preexponent D. (m/s) and activation energy QD (EV); 2) the boron diffusion coefficient in silicon at 1200 C. Ti - 400 T2 = loo