3: A 100-um-long bar of P-type Si is shown below (assume complete ionization and room temperature): (a) Calculate the resistance between the two ends of the Si bar at thermal equilibrium (room temperature). (b) Calculate the minority carrier diffusion coefficient. (c) If light (photon energy above the bandgap) is uniformly shined onto the semiconductor, with a generation rate of 1018 cm-3sec-1), calculate the electron and hole density at steady state. (d) Calculate the separation between electron and hole quasi Fermi levels under the light. (e) Calculate the resistance between the two end of the bar under the light