3. A sample of silicon has an intrinsic region but with doping configuration N = 10" acceptor / cm on the P-side and N, 10 donors/cm on the N- side. Assuming there is complete ionization and ignoring minority carriers (n>>p or p>>n) at 300K. Assume the doping material have =,=11.8 with the build in potential V = 0.757V. (a) Calculate depletion region width, W. (5 marks) (b) Find the maximum magnitude of the electric field, for this junction at equilibrium (300K). (5 marks) (c) Another Si p-n junction with cross-sectional area, A=0.001cm is formed with N=10 cm and N=10 cm. Assume the doping material have =,=11.8, 1500cm IV-s, H=450cm IV-s, and T=T, = 2.5s. Calculate current with a forward bias of 0.5 V. (10 marks)