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(3) The mobility in the channel of a MOSFET is lower than bulk due to (3 points) (a) Different carrier concentrating in the bulk (b)
(3) The mobility in the channel of a MOSFET is lower than bulk due to (3 points) (a) Different carrier concentrating in the bulk (b) Surface scattering (c) Electric field in the source and the drain region (d) All of the above
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Applied Physics
Authors: Dale ewen, Neill schurter, P. erik gundersen
10th Edition
978-0136116332, 136116337, 9780132830096, 978-0132109277
