4. (20 pts) The measured I-V characteristic of a Si diode at room temperature is plotted in a log scale below. Identify the cause of each nonideal I-V feature for (a)-e). You can choose from various possible sources listed here. (Caution: 2 points will be taken out for each wrong answer.) log|11 (a) (b) "2 (e) n=1 c) - High-level injection - V.> Vbi - Low-level injection - Avalanching process - Depletion approximation - Thermal recombination in the depletion region - Photogeneration - Band bending - Thermal generation in the depletion region -Series resistance (d) 12 Constants q=1.6 x 10-19 C kB = 8.617 x 10 eV/K 0 = 8.85 x 10-14 F/cm ni= 1 x 10/cm, & = 11.7, x(electron affinity) = 4.05 eV and Eg = 1.12 eV in Si at 300 K 4. (20 pts) The measured I-V characteristic of a Si diode at room temperature is plotted in a log scale below. Identify the cause of each nonideal I-V feature for (a)-e). You can choose from various possible sources listed here. (Caution: 2 points will be taken out for each wrong answer.) log|11 (a) (b) "2 (e) n=1 c) - High-level injection - V.> Vbi - Low-level injection - Avalanching process - Depletion approximation - Thermal recombination in the depletion region - Photogeneration - Band bending - Thermal generation in the depletion region -Series resistance (d) 12 Constants q=1.6 x 10-19 C kB = 8.617 x 10 eV/K 0 = 8.85 x 10-14 F/cm ni= 1 x 10/cm, & = 11.7, x(electron affinity) = 4.05 eV and Eg = 1.12 eV in Si at 300 K