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4.1 Calculate the intrinsic carrier concentration, n . at 7 = 200. 400, and 600 K for (a) silicon, (b) germanium, and (c) gallium arsenide.

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4.1 Calculate the intrinsic carrier concentration, n . at 7 = 200. 400, and 600 K for (a) silicon, (b) germanium, and (c) gallium arsenide. 4.2 The intrinsic carrier concentration in silicon is to be no greater than n, = 1 x 1013 cm-3. Assume E, = 1.12 eV. Determine the maximum temperature allowed for the silicon

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