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4.2 Consider a silicon PN step junction diode with Nd=1016cm and N = 5 x 105cm-. Assume T = 300 K. (a) Calculate the
4.2 Consider a silicon PN step junction diode with Nd=1016cm and N = 5 x 105cm-. Assume T = 300 K. (a) Calculate the built-in potential bi (b) Calculate the depletion-layer width (W dep) and its length on the N side (x) and P side (xp). Calculate the maximum electric field. (c) (d) Sketch the energy band diagram, electric potential, electric field distribution, and the space-charge profile. (e) Now let N = 108 cm-3. Repeat (a), (b), and (c). Compare these to the previous results. How have the depletion widths changed?
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ANSWER a To calculate the builtin potential Vbi we can use the formula Vbi kTq lnNaNdni2ight Given N...
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Analysis and Design of Analog Integrated Circuits
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
5th edition
1111827052, 1285401107, 9781285401102 , 978-0470245996
