5.) A particular Si device needs an implant of P with a peak at a depth of 1300A and a peak concentration of 1017cm3. From this data, the straggle (Rp) is expected to be 350A. a.) Determine the dose that should be used for this process. (Ans. 1014 ) b.) Determine the surface concentration. (Ans. 10 1015 ) c.) Find the as-implanted junction depth if the substrate is p-type with a concentration of 1015cm3B atoms. (Note: there will be 2 roots - negative roots are impossible and incredibly small nm-width values aren't the "true" depth to be considered)