5. A silicon diode is fabricated by starting with an n-type substrate (N!I = 10'\" cm"), into which indium is diffused to form as a p-type region doped at 10'\" cm". Assuming that an abrupt p' 'n junction is formed by the diffusion process. (20 marks) a. Calculate the Fermi level position in the p and n regions b. Determine the built in potential 0. Calculate the depletion widths on the p and n side