5. Epitaxial silicon films are grown in a low pressure, barrel-type reactor. Calculate a. the growth rate of Si at 1100 C, given that the gas-phase mass transfer coefficient is 1.5 cm/sec and the surface reaction rate constant is 2 x 10" exp(- 1.9 eV/kT) cm/sec. Assume that the molecular gas density is 4 x 1016 cm-3. b. What temperature will be required in order to increase the deposition rate to 3 x 10-7 cm/sec ? c. At what temperature does the transition from surface reaction to mass transfer limited regime occur