5.1 Answer the following questions as concisely as possible. (a) Using the energy band diagram, indicate how one visualizes photogeneration, intrinsic Auger recombination, and recombination via SRH centers. (b) Prior to processing, a portion of a semiconductor sample contains No = 10^14/cm3 donors and NT = lO^6/cm3 R-G centers. After processing (say in the fabrication of a device), the salVe portion of the semiconductor contains No = 10^16/ cm3 donors and NT = 10^10/ cm3 R-G centers. Did the processing increase or decrease the minority carrier lifetime? Explain. (c) Briefly explain the difference between "equilibrium" and "steady-state." (d) Make a plot of the net recombination rate (R) versus position inside the depletion region of a pn-junction diode maintained under equilibrium conditions.