5.16 The resistivity of doped silicon is based on the charge q on an electron, the electron density n, and the elec- tron mobility . The electron density is given in terms of the doping density N and the intrinsic carrier density n. The electron mobility is described by the temperature T, the ref- erence temperature To, and the reference mobility . The equations required to compute the resistivity are T-242 To Determine N, given To = 300 K, T = 1000 K, = 1 360 cm2 (V s)", q = I .7 10-19 C, ni = 6.2 I x 10 cm-3 and a desired = 6.5 x 10 vs cm/C. Employ initial guesses of N = 0 and 2.5 x 10". Use (a) bisection and (b) the false position method. 10