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. 7. A silicon pn junction with p region doping of 1017 cm and n region doping of 1015 cm-3 is exposed to sunlight. Assume
. 7. A silicon pn junction with p region doping of 1017 cm and n region doping of 1015 cm-3 is exposed to sunlight. Assume the photogenerated carrier density is uniform and is 1011 cm. Assume an ide...
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