Question
(a) Calculate the growth rate of a silicon layer from an SiCl4 source at 1200 C. Use hg=1 cm/s, ks=210^6 exp(-1.9 eV/kT) cm/s, and Ng=310^16
(a) Calculate the growth rate of a silicon layer from an SiCl4 source at 1200 C. Use hg=1 cm/s, ks=210^6 exp(-1.9 eV/kT) cm/s, and Ng=310^16 atoms/cm3 . (For silicon, N=510^22 /cm3 .)
(b) What is the change in growth rate if the temperature is increased by 25 C?
(c) At what temperature does ks=hg? What is the growth rate at this temperature?
1. (a) Calculate the growth rate of a silicon layer from an SiCl4 source at 1200C. Use hg=1 cm/s,ks=2106exp(1.9eV/kT)cm/s, and Ng=31016 atoms /cm3. (For silicon, N=51022 /cm3.) (b) What is the change in growth rate if the temperature is increased by 25C ? (c) At what temperature does ks=hg ? What is the growth rate at this temperatureStep by Step Solution
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Mass And Heat Transfer Analysis Of Mass Contactors And Heat Exchangers
Authors: T. W. Fraser Russell, Anne Skaja Robinson, Norman J. Wagner
1st Edition
0521886708, 9780521886703
