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A MOS capacitor is fabricated on an n-type substrate having a donor doping density of 5x106 cm-. i) Discuss and illustrate with a sketch
A MOS capacitor is fabricated on an n-type substrate having a donor doping density of 5x106 cm-. i) Discuss and illustrate with a sketch how and why the C-V characteristics change for measurements at high frequencies (>10 kHz). On your sketch, distinguish between the inversion, depletion and accumulation regions. [6 marks] Draw an energy band diagram of the MOS capacitor at depletion and inversion. [5 marks]
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Analysis and Design of Analog Integrated Circuits
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
5th edition
1111827052, 1285401107, 9781285401102 , 978-0470245996
