A NPN silicon transistor is operating in a common emitter configuration in the active region. IB is measured as 45 A flowing into the base, le is measured as 2.2 mA and VCE is measured as 6.5 volts. Determine the following (Po is the power dissipated by the transistor): (10pts) (suggestion draw transistor symbol and label with known information) a) lc = b) B = c) = d) VCB = e) PD=