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A particular silicon device needs to have an implant of boron with a peak at a depth of 0.3 114m and a peak concentration
A particular silicon device needs to have an implant of boron with a peak at a depth of 0.3 114m and a peak concentration of 10^17 cm^-3. Determine the implant energy and dose that should be used for this process. Find the as-implanted junction depth if the substrate is n-type with a concentration of 10^15 cm^-3.
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Answer The implant energy is The dose is calculated from the relation In order to find please ref...
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The Science And Engineering Of Materials
Authors: Donald R. Askeland, Wendelin J. Wright
7th Edition
1305076761, 978-1305076761
