A pn junction diode has a doping concentration of 10 (cm) on the p-type side, and is very highly doped on the n-type side (it is n* on the n-type side). The intrinsic carrier concentration is 10 (cm), the band gap is 2 (eV), and , = 15. Electron and hole effective masses are equal to 0.4mg. a) Sketch the band diagram for a reverse bias of 2 (V), and calculate the values of the band edges with respect to the quasi-Fermi levels far from the junction. b) Calculate the depletion charge per cm? on the n-type side. c) If an electron at the conduction band edge on the p-type side goes over to the n-type side without scattering, calculate its velocity.