A process is being developed to deposit a thin film of silicon on electronic grade silicon (Si) Q.1. (12 marks) onto the inner surface of a hollow glass optical fiber by thermal decomposition of silane ( SiH4 ) to solid Si. Silane gas is diluted in inert He gas to a composition of 1.0mole2SiH4 and fed into the hollow glass fiber, which has an inner diameter of 10.0 microns (10.0mm). The CVD process is carried out at 900K and 1atm. The Lennard-Jones parameters for silane =4.08A and /k=207.6K.B=2.576A and (/k)B=10.22K.1atm=101325Pa b) Estimate the binary gas-phase molecular diffusion coefficient of silane vapor in He a) Determine the mass fraction of silane in the gas mixture.? c) Assess the importance of Knudsen diffusion of silane vapor within the hollow glass gas at 900K for total system pressures of 1.0atm. ? fiber. d) Find Knudsen diffusion coefficient? A=SiH4,B=He,MA=32.12gmoleg,MB=4.00gmoleg,K=1.381016ergs/K,1erg=107J