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A p-type semiconductor (NA = 51016cm3 ) of cross section 1mm2 with a bandgap of Eg = 2.4eV is illuminated with a laser source of

A p-type semiconductor (NA = 51016cm3 ) of cross section 1mm2 with a bandgap of Eg = 2.4eV is illuminated with a laser source of 0.32 mW of photons with energy 4 eV. Assume that all the light is absorbed uniformly over the semiconductor length of 5m

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