A sample of pure Ge has an intrinsic charge carrier density of 2.5 x 101/m at 300 K. It is doped with donor impurity of 1 in every 106 Ge atoms. (a) What is the resistivity of the doped-Ge? Electron mobility and hole mobilities are 0.38 m/V.s and 0.18 m/V.s. Ge-atom density is 4.2 x 1028/m. (b) If this Ge-bar is 5.0 mm long and 25 x 10-12 m in cross-sectional area, what is its resistance? What is the voltage drop across the Ge-bar for a current of 1 A? No of doped carriers =