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A sample of silicon at room temperature has an intrinsic resistivity of 2.5 x 10 m. The sample is doped with 4 x 1016
A sample of silicon at room temperature has an intrinsic resistivity of 2.5 x 10 m. The sample is doped with 4 x 1016 donor atoms/m and 1016 acceptor atoms/m. Find the total current density if an electric field of 400 V/m is applied across the sample. Electron mobility is 0.125 m/V s. Hole mobility is 0.0475 m/V.s.
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Probability & Statistics For Engineers & Scientists
Authors: Ronald E. Walpole, Raymond H. Myers, Sharon L. Myers, Keying
7th Edition
9789813131279, 130415294, 9813131276, 978-0130415295
