Question: A semiconductor device requires n-type material; it is to be operated at 400K a) would Si doped with 10^15 atoms/cm^3 of Arsenic be useful in

A semiconductor device requires n-type material; it is to be operated at 400K
a) would Si doped with 10^15 atoms/cm^3 of Arsenic be useful in this applications
b) Could Ge doped with 10^15 cm^-3 antimony be used?

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At T400K Figure 317 indicates that nn for Si doped with N 105 cm so the Si would be ntype At T... View full answer

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