A Si single crystal with a length of 1.5m is grown by the Czochralski technique for
the production of wafers with a desired boron dopant level of 1 ppm. Thus, 1 ppm B
is added to the Si melt. Calculate the boron concentration profile in the single crystal
assuming that boron is incorporated into the single crystal according to the
equilibrium partition coefficient of 0.8. What portion of the single crystal would meet
the specification that the dopant level is within ±10% of the target level