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A silicon sample is doped with phosphorus atoms. The density of phosphorus atoms is 10 15 cm -3 . The donor energy level is at
A silicon sample is doped with phosphorus atoms. The density of phosphorus atoms is 1015cm-3. The donor energy level is at 0.045 eV below the conduction band edge. Determine the charge carrier concentrationand the Fermi level positionat 50 K, 100 K, 300 K and 600 K.
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