A silicon wafer that has 1016/cm3 of boron is found to have a neutral vacancy concentration of 21010/cm3 at some processing temperature and a singly positively charged vacancy concentration of 109 /cm3 at the same temperature: A. Determine the temperature and the activation energy of charged vacancies with respect to the intrinsic Fermi level. Note, depending on the temperature you calculate, you may have to account for changes in the band gap